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| PD - 9.1642A IRFR/U3303 HEXFET(R) Power MOSFET l l l l l l Ultra Low On-Resistance Surface Mount (IRFR3303) Straight Lead (IRFU3033) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = 30V RDS(on) = 0.031 G ID = 33A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. D -P a k T O -2 52 A A I-P a k TO -2 5 1 A A Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 33 21 120 57 0.45 20 95 18 5.7 5.0 -55 to + 150 300 (1.6mm from case ) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA RJA Junction-to-Case Junction-to-Ambient (PCB mount)** Junction-to-Ambient Typ. --- --- --- Max. 2.2 50 110 Units C/W 8/25/97 IRFR/U3303 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS I GSS Qg Q gs Q gd t d(on) tr t d(off) tf LD LS Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 30 --- --- 2.0 9.3 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.032 --- --- --- --- --- --- --- --- --- --- 11 99 16 28 4.5 7.5 750 400 140 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.031 VGS = 10V, ID = 18A 4.0 V VDS = VGS, I D = 250A --- S VDS = 25V, ID = 18A 25 VDS = 30V, VGS = 0V A 250 VDS = 24V, VGS = 0V, TJ = 150C 100 V GS = 20V nA -100 VGS = -20V 29 ID = 18A 7.3 nC VDS = 24V 13 VGS = 10V, See Fig. 6 and 13 --- VDD = 15V --- I D = 18A ns --- RG = 13 --- RD = 0.8, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz, See Fig. 5 D S Source-Drain Ratings and Characteristics IS ISM VSD t rr Q rr t on Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol --- --- 33 showing the A G integral reverse --- --- 120 p-n junction diode. S --- --- 1.3 V TJ = 25C, IS = 18A, VGS = 0V --- 53 80 ns TJ = 25C, IF = 18A --- 94 140 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Pulse width 300s; duty cycle 2%. Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25C, L = 590H Caculated continuous current based on maximum allowable junction RG = 25, IAS = 18A. (See Figure 12) temperature; Package limitation current = 20A. ISD 18A, di/dt 140A/s, VDD V(BR)DSS, This is applied for I-PAK, LS of D-PAK is measured between TJ 150C lead and center of die contact ** When mounted on 1" square PCB (FR-4 or G-10 Material ) . For recommended footprint and soldering techniques refer to application note #AN-994 IRFR/U3303 1000 TOP I D , Drain-to-Source Current (A) 100 BOTTOM I D , Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 1000 TOP BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 100 10 1 10 0.1 4.5V 20s PULSE WIDTH TJ = 25 C 1 10 100 0.01 0.1 1 0.1 4.5V 1 20s PULSE WIDTH TJ = 150 C 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) ID = 30A I D , Drain-to-Source Current (A) 10 TJ = 150 C 1.5 1.0 TJ = 25 C 1 0.5 0.1 4 5 6 7 V DS = 15V 25V 20s PULSE WIDTH 8 9 10 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRFR/U3303 1400 1200 VGS, Gate-to-Source Voltage (V) VGS Ciss Crss Coss = 0V, f = 1MHz = Cgs + Cgd , Cds SHORTED = Cgd = Cds + Cgd 20 ID = 18A VDS = 24V VDS = 15V 16 C, Capacitance (pF) 1000 800 Ciss Coss 12 600 8 400 200 Crss 4 0 1 10 100 0 0 5 10 15 FOR TEST CIRCUIT SEE FIGURE 13 20 25 30 VDS , Drain-to-Source Voltage (V) Q G, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 ISD , Reverse Drain Current (A) TJ = 25 C TJ = 150 C OPERATION IN THIS AREA LIMITED BY RDS(on) 100 I D , Drain Current (A) 100 10us 10 100us 10 1ms 1 0.1 0.0 V GS = 0 V 1.0 2.0 3.0 4.0 5.0 1 1 TC = 25 C TJ = 150 C Single Pulse 10 10ms 100 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area IRFR/U3303 35 LIMITED BY PACKAGE 30 VDS VGS RG RD D.U.T. + ID , Drain Current (A) 25 - VDD 20 10V Pulse Width 1 s Duty Factor 0.1 % 15 10 Fig 10a. Switching Time Test Circuit VDS 5 90% 0 25 50 75 100 125 150 T C , Case Temperature ( C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 10 (Z thJC ) 1 D = 0.50 0.20 0.10 0.05 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 Thermal Response 0.1 0.02 0.01 0.01 0.00001 t1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case IRFR/U3303 L D.U.T. RG + V - DD 10 V 200 EAS , Single Pulse Avalanche Energy (mJ) VDS TOP BOTTOM 150 ID 8.0A 11A 18A IAS tp 0.01 100 Fig 12a. Unclamped Inductive Test Circuit 50 V(BR)DSS tp VDD VDS 0 25 50 75 100 125 150 Starting T J, Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F 10 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit IRFR/U3303 Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer D.U.T + - + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% ISD * V GS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS IRFR/U3303 Package Outline TO-252AA Outline Dimensions are shown in millimeters (inches) 6.73 (.265) 6.35 (.250) -A5.46 (.215) 5.21 (.205) 4 6.45 (.245) 5.68 (.224) 6.22 (.245) 5.97 (.235) 1.02 (.040) 1.64 (.025) 1 2 3 0.51 (.020) MIN. 10.42 (.410) 9.40 (.370) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) LEA D AS SIG NME NT S 1 - G AT E 2 - DRA IN 3 - S OUR CE 4 - DRA IN -B 1.52 (.060) 1.15 (.045) 3X 2X 1.14 (.045) 0.76 (.030) 0.89 (.035) 0.64 (.025) 0.25 ( .010) M AMB NOT ES: 0.58 (.023) 0.46 (.018) 2.28 (.090) 4.57 (.180) 1 DIME NSIO NING & T OLE RANCING P ER A NSI Y 14.5M, 1982. 2 CO NTRO LLING DIMENS ION : INCH. 3 CO NFO RMS T O JEDE C O UTLINE TO -252AA . 4 DIME NSIO NS S HO W N ARE BEF O RE SO LD ER DIP , SO LDER DIP MA X. +0.16 (.006). Part Marking Information TO-252AA (D-Pak) E X A M P LE : T H IS IS A N IR F R 120 W IT H A S S E MB L Y LOT C OD E 9U 1P IN T E R N A T IO N A L R E CT IF IE R LO G O A IR F R 12 0 9U 1P F IR S T P O R T ION OF P A R T N U MB E R A S S E MB L Y L O T C OD E S E C O N D P O R T ION OF PART NUMBER IRFR/U3303 Package Outline TO-251AA Outline Dimensions are shown in millimeters (inches) 6.73 (.265) 6.35 (.250) -A5.46 (.215) 5.21 (.205) 4 6.45 (.245) 5.68 (.224) 1.52 ( .060) 1.15 ( .045) 1 -B 2.28 (.090) 1.91 (.075) 9.65 (.380) 8.89 (.350) 2 3 6.22 ( .245) 5.97 ( .235) 1.27 ( .050) 0.88 ( .035) 2.38 (.094) 2.19 (.086) 0.58 (.023) 0.46 (.018) LEAD AS SIG NMENT S 1 - G AT E 2 - DRA IN 3 - S OURCE 4 - DRA IN NOT ES : 1 DIME NSIO NING & T OLE RANCING P ER A NSI Y14.5M, 1982. 2 CO NTRO LLIN G DIMENS ION : INCH. 3 CO NFO RMS TO J EDE C O UT LINE TO -252AA . 4 DIME NSIO NS SHOW N A RE BEF O RE SO LDER DIP , SO LDER DIP MA X. +0.16 (.006). 3X 1.14 (.045) 0.76 (.030) 3X 0.89 (.035) 0.64 (.025) M AMB 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) 2.28 (.090) 2X 0.25 (.010) Part Marking Information TO-251AA (I-Pak) E X A M P LE : TH IS IS A N IR F U1 20 W IT H A S S E M B LY LO T C O D E 9U 1P IN TE RN A T IO N A L R E C T IF IE R LO GO IR F U 120 9U 1 P F IR S T P O RT IO N O F P A R T N UM B E R A S S E M B LY LO T C O D E S E C O N D P O R T ION OF PART NUMBER IRFR/U3303 Tape & Reel Information TO-252AA TR TRR TRL 16 .3 ( .64 1 ) 15 .7 ( .61 9 ) 1 6 .3 ( .6 4 1 ) 1 5 .7 ( .6 1 9 ) 1 2 .1 ( .4 76 ) 1 1 .9 ( .4 69 ) F E E D D IR E C TIO N 8 .1 ( .3 1 8 ) 7 .9 ( .3 1 2 ) F E E D D IR E C TIO N N O T ES : 1 . C O N T R O LL IN G D IM E N S IO N : M IL LIM E T E R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S ( IN C H E S ). 3 . O U T L IN E C O N FO R M S TO E IA -48 1 & E IA -5 4 1 . 1 3 IN C H 16 m m NO T ES : 1 . O U T L IN E C O N F O R M S T O E IA -4 8 1 . WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 8/97 |
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